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SiC10A065ND |
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| Part Number | SiC10A065ND |
| Manufacturer | Pan Jit International |
| Description | SiC10A065ND SILICON CARBIDE SCHOTTKY DIODE Voltage 650 V Current 10 A Features Temperature Independent Switching Behavior Low Conduction and Switching Loss High Surge Current Capability ... |
| Features |
Temperature Independent Switching Behavior Low Conduction and Switching Loss High Surge Current Capability Positive Temperature Coefficient on VF Fast Reverse Recovery Mechanical Data Case: Molded plastic, TO-263 Marking: 10A065ND Benefits High Frequency Operation Higher System Efficiency Environmental Protection Parallel Device Convenience Hard Switching & High Reliability High Temperature Application TO-263 Unit: inch(mm) Maximum Ratings PARAMETER Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Continuous Forward Curren... |
| Document |
 SiC10A065ND Data Sheet
PDF 478.37KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SiC10A065T |
Pan Jit International |
SILICON CARBIDE SCHOTTKY DIODE |
|
| 2 | SiC10A120T |
Pan Jit International |
SILICON CARBIDE SCHOTTKY DIODE |
|
| 3 | SIC101 |
SIC |
SMART-IC |
|
| 4 | SIC10120PTA |
MCC |
Schottky Barrier Rectifier |
|
| 5 | SIC10C60 |
CITC |
10A SiC Schottky Diode |
|