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Ratings min Typ max 5.5 14 29 10.2 8.8 1 3.7 0.7 1.0 Unit nS nS nS nS nC nC nC V Typical Characteristics at Ta=250C 2 Si9926 3 Si9926 4 .
·Low On resistance.
·1.8V drive.
·RoHS compliant.
Si9926 Dual N-Channel Enhancement MOSFET
Si9926
Package Dimensions
Specifications
Absolute Maximum Ratings at Ta=250C
Parameter
Symbol
Drain-to-Source Voltage
VDSS
Gate-to-Source Voltage
VGSS
Drain Current (DC)
ID
Drain Current (Pulse)
IDP
Allowable Power Dissipation
PD
Total Dissipation
PT
Channel Temperature
Tch
Storage Temperature
Tstg
Conditions
PW≤10uS, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.8mm) 1unit Mounted on a ceramic board (1000mm2×0.8mm)
Ratings
20 +12 7.6 30 1.3 1.7 150 -55~+150
Unit
V V A A W W.
Si9926 - KEXIN
SMD Type Dual N-Channel 2.5-V (G-S) MOSFET SI9926 IC Features Dual N-Channel 2.5-V (G-S) MOSFET Absolute Maximum Rati.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SI9925 |
NXP |
N-channel enhancement mode field-effect transistor |
|
| 2 | SI9925DY |
NXP |
N-channel enhancement mode field-effect transistor |
|
| 3 | SI9925DY |
Vishay Siliconix |
Dual N-Channel MOSFET |
|
| 4 | SI9926ADY |
Vishay Siliconix |
Dual N-Channel 2.5-V (G-S) MOSFET |
|
| 5 | SI9926BDY |
Vishay Siliconix |
Dual N-Channel 2.5-V (G-S) MOSFET |
|
| 6 | Si9926CDY |
Vishay |
Dual N-Channel MOSFET |
|
| 7 | Si9928DY |
Vishay |
Complimentary MOSFET |
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| 8 | SI9910 |
Vishay Siliconix |
Adaptive Power MOSFET Driver1 |
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| 9 | SI9912 |
Vishay Siliconix |
Half-Bridge MOSFET Driver for Switching Power Supplies |
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| 10 | SI9913 |
Vishay Siliconix |
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| 11 | SI9933ADY |
Vishay Siliconix |
Dual P-Channel 20-V (D-S) MOSFET |
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| 12 | SI9933BDY |
Vishay Siliconix |
Dual P-Channel 2.5-V (G-S) MOSFET |
|