Si9926CDY - Vishay

Si9926CDY Dual N-Channel MOSFET

New Product Si9926CDY Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.018 at VGS = 4.5 V 0.022 at VGS = 2.5 V ID (A)a 8 8 10 nC Qg (Typ.) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS SO-8 S1 G1 S.

Features

• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC APPLICATIONS SO-8 S1 G1 S2 G2 1 2 3 4 Top View 8 7 6 5 D1 D1 D2 D2
• DC/DC Converter - Game Machine - PC D1 D2 G1 G2 Ordering Information: Si9926CDY-T1-E3 (Lead (Pb)-free) Si9926CDY-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-.