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Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: Si9925DY in SOT96-1 (SO8). 2. Features s Low on-state resistance s Fast switching s TrenchMOS™ technology. 3. Applications s s s s s DC to DC convertors DC motor control Lithium-ion battery applications Notebook PC Portable equipm.
s Low on-state resistance s Fast switching s TrenchMOS™ technology. 3. Applications s s s s s DC to DC convertors DC motor control Lithium-ion battery applications Notebook PC Portable equipment applications. c c 4. Pinning information Table 1: Pin 1 2 3 4 5,6 7,8 Pinning - SOT96-1, simplified outline and symbol Description source 1 (s1) 8 7 6 5 d1 d2 Simplified outline Symbol gate 1 (g1) source 2 (s2) gate 2 (g2) drain 2 (d2) drain 1 (d1) pin 1 index 03ab52 1 2 3 4 03ab58 g1 s1 g2 s2 SOT96-1 (SO8) 1. TrenchMOS is a trademark of Royal Philips Electronics. Philips Semiconductor.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SI9925DY |
NXP |
N-channel enhancement mode field-effect transistor |
|
| 2 | SI9925DY |
Vishay Siliconix |
Dual N-Channel MOSFET |
|
| 3 | Si9926 |
Nanxin |
Dual N-Channel MOSFET |
|
| 4 | SI9926 |
KEXIN |
Dual N-Channel MOSFET |
|
| 5 | SI9926ADY |
Vishay Siliconix |
Dual N-Channel 2.5-V (G-S) MOSFET |
|
| 6 | SI9926BDY |
Vishay Siliconix |
Dual N-Channel 2.5-V (G-S) MOSFET |
|
| 7 | Si9926CDY |
Vishay |
Dual N-Channel MOSFET |
|
| 8 | Si9928DY |
Vishay |
Complimentary MOSFET |
|
| 9 | SI9910 |
Vishay Siliconix |
Adaptive Power MOSFET Driver1 |
|
| 10 | SI9912 |
Vishay Siliconix |
Half-Bridge MOSFET Driver for Switching Power Supplies |
|
| 11 | SI9913 |
Vishay Siliconix |
Dual MOSFET Bootstrapped Driver with Break-Before-Make |
|
| 12 | SI9933ADY |
Vishay Siliconix |
Dual P-Channel 20-V (D-S) MOSFET |
|