The Si9912 is a dual MOSFET high-speed driver with break-before-make. It is designed to operate in high frequency dc-dc switchmode power supplies. The high-side driver is bootstrapped to handle the high voltage slew rate associated with “floating” high-side gate drivers. Each driver is capable of switching a 3000-pF load with 60-ns propogation delay and 25-n.
D D D D D D D D D D 4.5- to 5.5-V Operation Undervoltage Lockout 250-kHz to 1-MHz Switching Frequency Shutdown Quiescent Current <5 mA One Input PWM Signal Generates Both Drive Bootstrapped High-Side Drive Operates from 4.5- to 30-V Supply TTL/CMOS Compatible Input Levels 1-A Peak Drive Current Break-Before-Make Circuit APPLICATIONS D D D D D Multiphase Desktop CPU Supplies Single-Supply Synchronous Buck Converters Mobile Computing CPU Core Power Converters Standard-Synchronous Converters High Frequency Switching Converters DESCRIPTION The Si9912 is a dual MOSFET high-speed driver with break.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SI9910 |
Vishay Siliconix |
Adaptive Power MOSFET Driver1 | |
2 | SI9913 |
Vishay Siliconix |
Dual MOSFET Bootstrapped Driver with Break-Before-Make | |
3 | SI9925 |
NXP |
N-channel enhancement mode field-effect transistor | |
4 | SI9925DY |
NXP |
N-channel enhancement mode field-effect transistor | |
5 | SI9925DY |
Vishay Siliconix |
Dual N-Channel MOSFET | |
6 | Si9926 |
Nanxin |
Dual N-Channel MOSFET | |
7 | SI9926 |
KEXIN |
Dual N-Channel MOSFET | |
8 | SI9926ADY |
Vishay Siliconix |
Dual N-Channel 2.5-V (G-S) MOSFET | |
9 | SI9926BDY |
Vishay Siliconix |
Dual N-Channel 2.5-V (G-S) MOSFET | |
10 | Si9926CDY |
Vishay |
Dual N-Channel MOSFET | |
11 | Si9928DY |
Vishay |
Complimentary MOSFET | |
12 | SI9933ADY |
Vishay Siliconix |
Dual P-Channel 20-V (D-S) MOSFET |