SI9926ADY - Vishay Siliconix

SI9926ADY Dual N-Channel 2.5-V (G-S) MOSFET

Si9926ADY New Product Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.030 @ VGS = 4.5 V 0.040 @ VGS = 2.5 V ID (A) 6 5 D1 D2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View N-Channel MOSFET N-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 S1 S2 G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source.

Features

JA RthJF Symbol Typical 50 80 30 Maximum 62.5 100 40 Unit _C/W 1 Si9926ADY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "12 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 6 A VGS = 2.5 V, ID = 5 A VDS = 15 V, ID = 6 A IS = 1.7 A,.