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Si9926 |
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| Part Number | Si9926 |
| Manufacturer | Nanxin |
| Description | Ratings min Typ max 5.5 14 29 10.2 8.8 1 3.7 0.7 1.0 Unit nS nS nS nS nC nC nC V Typical Characteristics at Ta=250C 2 Si9926 3 Si9926 4 ... |
| Features |
·Low On resistance. ·1.8V drive. ·RoHS compliant. Si9926 Dual N-Channel Enhancement MOSFET Si9926 Package Dimensions Specifications Absolute Maximum Ratings at Ta=250C Parameter Symbol Drain-to-Source Voltage VDSS Gate-to-Source Voltage VGSS Drain Current (DC) ID Drain Current (Pulse) IDP Allowable Power Dissipation PD Total Dissipation PT Channel Temperature Tch Storage Temperature Tstg Conditions PW≤10uS, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.8mm) 1unit Mounted on a ceramic board (1000mm2×0.8mm) Ratings 20 +12 7.6 30 1.3 1.7 150 -55~+150 Unit V V A A W W... |
| Document |
 Si9926 Data Sheet
PDF 196.42KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SI9925 |
NXP |
N-channel enhancement mode field-effect transistor |
|
| 2 | SI9925DY |
NXP |
N-channel enhancement mode field-effect transistor |
|
| 3 | SI9925DY |
Vishay Siliconix |
Dual N-Channel MOSFET |
|
| 4 | SI9926 |
KEXIN |
Dual N-Channel MOSFET |
|
| 5 | SI9926ADY |
Vishay Siliconix |
Dual N-Channel 2.5-V (G-S) MOSFET |
|