Si4802DY - Vishay

Si4802DY N-Channel 30-V (D-S) MOSFET

Si4802DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.022 @ VGS = 10 V 0.030 @ VGS = 4.5 V ID (A) 8.4 7.2 D SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si4802DY Si4802DY-T1 (with Tape and Reel) 8 7 6 5 D D D D S N-Channel MOSFET G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Dra.

Features

Steady State Steady State Symbol RthJA RthJF Typical 40 80 20 Maximum 50 95 25 Unit _C/W 1 Si4802DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 8.4 A VGS = 4.5 V, ID = 7.2 A VDS = 15 V, ID = 8.