SI4807DY - Vishay Siliconix

SI4807DY P-Channel MOSFET

Si4807DY Vishay Siliconix P-Channel 30:1 Ratio Dual-Gate 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) Gate 1 –30 30 Gate 2 rDS(ON) (W) 0.035 @ VGS = –10 V 0.054 @ VGS = –4.5 V 1.3 @ VGS = –10 V 2.2 @ VGS = –4.5 V ID (A) "6 "4.8 "0.9 "0.7 D SO-8 G2 G1 S S 1 2 3 4 Top View S P-Channel MOSFET 8 7 6 5 NC D D D G2 G1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS .

Features

Limit 55 Unit _C/W 2-1 Si4807DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) rDS1(on) DS1( ) a D i Source Drain Drain-Source S On-State On O State S Resistance R i Symbol Test Condition Min Typ Max Unit VDS = VGS, ID =
  –250 mA VDS = 0 V, VGS = "20 V VDS =
  –30 V, VGS = 0 V VDS =
  –30 V, VGS = 0 V, TJ = 55_C (G1 = G2) VDS =
  –5 V, VGS =
  –10 V (G1 = G2) VGS =
  –10 V, ID =
  –6 A (G1 = G2) VGS =
  –4.5 V, ID =
  –4.8 A VG1S = 0 V, VG2S =.