Si4810BDY - Vishay

Si4810BDY N-Channel 30-V (D-S) MOSFET

Si4810BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) 0.0135 at VGS = 10 V 0.020 at VGS = 4.5 V ID (A) 10 8 FEATURES • • • • TrenchFET® Power MOSFETS Fast Switching Speed Low Gate Charge 100 % UIS and Rg Tested Pb-free Available RoHS* COMPLIANT SCHOTTKY PRODUCT SUMMARY VDS (V) 30 Diode Fo.

Features

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• TrenchFET® Power MOSFETS Fast Switching Speed Low Gate Charge 100 % UIS and Rg Tested Pb-free Available RoHS
* COMPLIANT SCHOTTKY PRODUCT SUMMARY VDS (V) 30 Diode Forward Voltage VSD (V) 0.53 at 3.0 A IF (A) 3.8 APPLICATIONS
• DC-DC Logic Level
• Low Voltage and Battery Powered Applications D SO-8 S S S G 1 2 3 4 Top View 8 7 6 5 D D D D Ordering Information: Si4810BDY-T1 Si4810BDY-T1-E3 (Lead (Pb)-free) G N-Channel MOSFET S Schottky Diode ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Vol.