SI4804DY - Vishay Siliconix

SI4804DY Dual N-Channel MOSFET

Si4804DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.022 @ VGS = 10 V 0.030 @ VGS = 4.5 V ID (A) 7.5 6.5 FEATURES D TrenchFETr Power MOSFET D 100% Rg Tested Pb-free Available S1 1 G1 2 S2 3 G2 4 SO-8 8 D1 7 D1 6 D2 5 D2 Top View Ordering Information: Si4804DY Si4804DY-T1 (with Tape and Reel) Si4804DY.

Features

D TrenchFETr Power MOSFET D 100% Rg Tested Pb-free Available S1 1 G1 2 S2 3 G2 4 SO-8 8 D1 7 D1 6 D2 5 D2 Top View Ordering Information: Si4804DY Si4804DY-T1 (with Tape and Reel) Si4804DY—E3 (Lead (Pb)-Free) Si4804DY-T1—E3 (Lead (Pb)-Free with Tape and Reel) D1 D2 G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Single Avalanche Current Si.