SI4800 - NXP

SI4800 N-channel FET

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s Low gate charge s Low on-state resistance s Surface mounted package s Fast switching. 1.3 Applications s Portable appliances s Lithium-ion battery chargers s Notebook computers s DC-to-DC converters. 1.4 Quick reference data s VDS ≤ 30 V s .

Features

s Low gate charge s Low on-state resistance s Surface mounted package s Fast switching. 1.3 Applications s Portable appliances s Lithium-ion battery chargers s Notebook computers s DC-to-DC converters. 1.4 Quick reference data s VDS ≤ 30 V s Ptot ≤ 2.5 W s ID ≤ 9 A s RDSon ≤ 18.5 mΩ 2. Pinning information Table 1: Pin 1,2,3 4 5,6,7,8 Pinning - SOT96-1 (SO-8), simplified outline and symbol Description Simplified outline source (s) gate (g) 85 drain (d) 1 Top view 4 MBK187 SOT96-1 (SO8) Symbol d g MBB076 s Philips Semiconductors SI4800 N-channel TrenchMOS™ logic level FET 3..