SI4804BDY - Vishay Siliconix

SI4804BDY Dual N-Channel MOSFET

Dual N-Channel 30 V (D-S) MOSFET Si4804BDY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.022 at VGS = 10 V 0.030 at VGS = 4.5 V ID (A) 7.5 6.5 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • PWM Optimized • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Symmetrical Buck-Bo.

Features

• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• PWM Optimized
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC APPLICATIONS
• Symmetrical Buck-Boost DC/DC Converter S1 1 G1 2 S2 3 G2 4 SO-8 8 D1 7 D1 6 D2 5 D2 D1 G1 D2 G2 Top View Ordering Information: Si4804BDY-T1-E3 (Lead (Pb)-free) Si4804BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Continuous.