Si4348DY New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) 0.0125 at VGS = 10 V 0.014 at VGS = 4.5 V ID (A) 11 10 FEATURES • TrenchFET® Gen II Power MOSFET Pb-free APPLICATIONS • High-Side DC/DC Conversion - Notebook - Desktop - Server • Notebook Logic DC/DC, Low-Side RoHS COMPLIANT SO-8 D S S S G 1 2 3 4 .
• TrenchFET® Gen II Power MOSFET
Pb-free
APPLICATIONS
• High-Side DC/DC Conversion - Notebook - Desktop - Server
• Notebook Logic DC/DC, Low-Side
RoHS
COMPLIANT
SO-8
D S S S G 1 2 3 4 Top View S Ordering Information: Si4348DY-T1-E3 (Lead (Pb)-free) N-Channel MOSFET 8 7 6 5 D D D D G
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 °C TA = 70.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SI4340DY |
Vishay Siliconix |
Dual N-Channel MOSFET | |
2 | SI4300 |
Silicon Laboratories |
Dual-Band Monolithic Power Amplifier System | |
3 | SI4300DY |
Vishay |
N-Channel 30-V (D-S) Fast Switching MOSFET | |
4 | SI4300T |
Silicon Laboratories |
Tri-Band Monolithic Power Amplifier System | |
5 | SI4308DY |
Vishay |
Dual N-Channel 30-V (D-S) MOSFET | |
6 | Si4313-B1 |
Silicon Laboratories |
LOW-COST ISM RECEIVER | |
7 | Si4320DY |
Vishay |
N-Channel 30-V (D-S) MOSFET | |
8 | Si4322DY |
Vishay |
N-Channel MOSFET | |
9 | SI4330DY |
Vishay Siliconix |
Dual N-Channel 30-V (D-S) MOSFET | |
10 | SI4336DY |
Vishay Siliconix |
N-Channel 30-V (D-S) MOSFET | |
11 | Si4354DY |
Vishay |
N-Channel 30-V (D-S) MOSFET | |
12 | SI4355 |
Silicon Laboratories |
LOW-CURRENT OOK/(G)FSK SUB-GHZ RECEIVER |