SI4336DY - Vishay Siliconix

SI4336DY N-Channel 30-V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET Si4336DY Vishay Siliconix PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 30 0.00325 at VGS = 10 V 0.0042 at VGS = 4.5 V ID (A) 25 22 Qg (Typ) 36 SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View Ordering Information: Si4336DY-T1 Si4336DY-T1-E3 (Lead (Pb)-free) FEATURES • Ultra Low On-Resistance Using High Density TrenchFET® Gen II Power MOS.

Features

• Ultra Low On-Resistance Using High Density TrenchFET® Gen II Power MOSFET Technology
• Qg Optimized
• 100 % Rg Tested APPLICATIONS
• Synchronous Buck Low-Side - Notebook - Server - Workstation
• Synchronous Rectifier, POL D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 sec Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID 25 20 17 13 Pulsed Drain Current (10 µs Pulse Width) IDM 70 Continuous Source Current (Diode Conduction)a IS 2.9 1..