Si4330DY New Product Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES D TrenchFETr Power MOSFET D 100% Rg Tested PRODUCT SUMMARY VDS (V) 30 APPLICATIONS ID (A) 8.7 7.5 rDS(on) (W) 0.0165 @ VGS = 10 V 0.022 @ VGS = 4.5 V D Notebook − Load Switch − DC/DC Conversion − Auxiliary Voltage D1 D2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View Ordering Informat.
D TrenchFETr Power MOSFET D 100% Rg Tested PRODUCT SUMMARY VDS (V) 30 APPLICATIONS ID (A) 8.7 7.5 rDS(on) (W) 0.0165 @ VGS = 10 V 0.022 @ VGS = 4.5 V D Notebook − Load Switch − DC/DC Conversion − Auxiliary Voltage D1 D2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View Ordering Information: Si4330DY—E3 Si4330DY-T1—E3 (with Tape and Reel) S1 N-Channel MOSFET S2 N-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diod.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SI4336DY |
Vishay Siliconix |
N-Channel 30-V (D-S) MOSFET | |
2 | SI4300 |
Silicon Laboratories |
Dual-Band Monolithic Power Amplifier System | |
3 | SI4300DY |
Vishay |
N-Channel 30-V (D-S) Fast Switching MOSFET | |
4 | SI4300T |
Silicon Laboratories |
Tri-Band Monolithic Power Amplifier System | |
5 | SI4308DY |
Vishay |
Dual N-Channel 30-V (D-S) MOSFET | |
6 | Si4313-B1 |
Silicon Laboratories |
LOW-COST ISM RECEIVER | |
7 | Si4320DY |
Vishay |
N-Channel 30-V (D-S) MOSFET | |
8 | Si4322DY |
Vishay |
N-Channel MOSFET | |
9 | SI4340DY |
Vishay Siliconix |
Dual N-Channel MOSFET | |
10 | Si4348DY |
Vishay |
N-Channel 30-V (D-S) MOSFET | |
11 | Si4354DY |
Vishay |
N-Channel 30-V (D-S) MOSFET | |
12 | SI4355 |
Silicon Laboratories |
LOW-CURRENT OOK/(G)FSK SUB-GHZ RECEIVER |