SI4300DY - Vishay

SI4300DY N-Channel 30-V (D-S) Fast Switching MOSFET

Si4300DY Vishay Siliconix N-Channel 30-V (D-S), Reduced Qg Fast Switching MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.0185 @ VGS = 10 V 0.033 @ VGS = 4.5 V ID (A) 9 7 FEATURES D TrenchFETr Power MOSFET D LITTLE FOOT Plust Integrated Schottky D PWM Optimized SCHOTTKY PRODUCT SUMMARY VDS (V) 30 APPLICATIONS D Low Power Sychronous .

Features

D TrenchFETr Power MOSFET D LITTLE FOOT Plust Integrated Schottky D PWM Optimized SCHOTTKY PRODUCT SUMMARY VDS (V) 30 APPLICATIONS D Low Power Sychronous Rectification IF (A) 2.0 D K VSD (v) Diode Forward Voltage 0.5 V @ 1 A SO-8 S/A S/A S/A G 1 2 3 4 Top View Ordering Information: Si4300DY Si4300DY-T1 (with Tape and Reel) 8 7 6 5 D/K D/K D/K D/K Schottky Diode G N-Channel MOSFET S A ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage Continuous Drain Current (TJ = 150_C) (MOSFET)a Pulsed Drain.