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Si4354DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.0165 at VGS = 10 V 0.0185 at VGS = 4.5 V ID (A) 9.5 9.0 FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Gen II Power MOSFET • 100 % Rg Tested APPLICATIONS • High-Side DC/DC Conversion - Notebook - Server SO-8 S S S G 1 2 3 4 Top View .
• Halogen-free According to IEC 61249-2-21 Available
• TrenchFET® Gen II Power MOSFET
• 100 % Rg Tested
APPLICATIONS
• High-Side DC/DC Conversion - Notebook - Server
SO-8
S S S G 1 2 3 4 Top View S Ordering Information: Si4354DY-T1-E3 (Lead (Pb)-free) Si4354DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET 8 7 6 5 D D D D G D
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)b Pulsed Drain Current Continuous Source Current (Diode Conduction)b Maximum Power Dissipationb Operating Junc.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SI4355 |
Silicon Laboratories |
LOW-CURRENT OOK/(G)FSK SUB-GHZ RECEIVER |
|
| 2 | Si4355-C |
Silicon Laboratories |
LOW-CURRENT OOK/(G)FSK SUB-GHZ TRANSCEIVER / TRANSMITTER AND RECEIVER |
|
| 3 | Si4356 |
Silicon Laboratories |
STANDALONE SUB-GHZ RECEIVER |
|
| 4 | Si4356DY |
Vishay |
N-Channel 30-V MOSFET |
|
| 5 | SI4300 |
Silicon Laboratories |
Dual-Band Monolithic Power Amplifier System |
|
| 6 | SI4300DY |
Vishay |
N-Channel 30-V (D-S) Fast Switching MOSFET |
|
| 7 | SI4300T |
Silicon Laboratories |
Tri-Band Monolithic Power Amplifier System |
|
| 8 | SI4308DY |
Vishay |
Dual N-Channel 30-V (D-S) MOSFET |
|
| 9 | Si4313-B1 |
Silicon Laboratories |
LOW-COST ISM RECEIVER |
|
| 10 | Si4320DY |
Vishay |
N-Channel 30-V (D-S) MOSFET |
|
| 11 | Si4322DY |
Vishay |
N-Channel MOSFET |
|
| 12 | SI4330DY |
Vishay Siliconix |
Dual N-Channel 30-V (D-S) MOSFET |
|