Si4322DY - Vishay

Si4322DY N-Channel MOSFET

Si4322DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.0085 at VGS = 10 V 0.0125 at VGS = 4.5 V ID (A)a 18 15 Qg (Typ.) 11.7 nC SCHOTTKY AND BODY DIODE PRODUCT SUMMARY VDS (V) 30 VSD (V) Diode Forward Voltage 0.4 at 2 A IS (A) 5a S1 S2 S3 G4 SO-8 8D 7D 6D 5D Top View Ordering Informati.

Features

• Halogen-free According to IEC 61249-2-21 Available
• TrenchFET® Power MOSFET
• 100 % Rg Tested APPLICATIONS
• Synchronous Buck-Low Side - Notebook - Server - Workstation
• Synchronous Rectifier-POL D G N-Channel MOSFET S Schottky Diode ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °.