SVTP209R7NP7 - Silan Microelectronics

SVTP209R7NP7 N-CHANNEL MOSFET

SVTP209R7NP7 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance. This device is widely used in power management f.

Features

 130A, 200V, RDS(on)(typ.)=8.5m@VGS=10V  Low gate charge  Low Crss  Fast switching  Extreme dv/dt rated  100% avalanche tested  Pb-free lead plating  RoHS compliant 1 23 TO-247-3L KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max ID Qg.typ. Ratings 200 3.5~4.5 9.7 130 185 Unit V V m A nC ORDERING INFORMATION Part No. SVTP209R7NP7 Package TO-247-3L Marking P209R7NP7 Hazardous Substance Control Halogen free Packing Type Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn Rev.:1.0 Page 1 of 9 Silan Microelectronics SVTP209R7NP7_Datashee.