SVT03100ND is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode. This device is wide.
60A, 30V, RDS(on)(typ.)=8.5m@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability NOMENCLATURE 2 1 3 1.Gate 2.Drain 3.Source 1 3 TO-252-2L S V TX X X R X N X Silan Low voltage trench MOS products Nominal voltage, using 2 digits; Example: 04 denotes 40V, 10 denotes 100V Package information. Example: T:TO-220; D:TO- 252; MJ:TO-251J; Channel polarity: N denotes N channel, P denotes P channel Resistance: R75 denotes 0.7mΩ;7R5 denotes 7.5mΩ; 100 denotes 10mΩ; 101 denotes 100mΩ ORDERING INFORMATION Part No. SVT03100NDTR Package TO-252-2L Marking 03100ND Hazar.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SVT03100NL3 |
Silan Microelectronics |
N-CHANNEL MOSFET | |
2 | SVT03110PL3 |
Silan Microelectronics |
P-CHANNEL MOSFET | |
3 | SVT03120NL2 |
Silan Microelectronics |
N-CHANNEL MOSFET | |
4 | SVT03380PSA |
Silan Microelectronics |
P-CHANNEL MOSFET | |
5 | SVT033R5NAT |
Silan Microelectronics |
N-CHANNEL MOSFET | |
6 | SVT033R5NT |
Silan Microelectronics |
N-CHANNEL MOSFET | |
7 | SVT034R0NL5 |
Silan Microelectronics |
N-CHANNEL MOSFET | |
8 | SVT035R5ND |
Silan Microelectronics |
N-CHANNEL MOSFET | |
9 | SVT035R5NL5 |
Silan Microelectronics |
N-CHANNEL MOSFET | |
10 | SVT035R5NMJ |
Silan Microelectronics |
N-CHANNEL MOSFET | |
11 | SVT035R5NSA |
Silan Microelectronics |
N-CHANNEL MOSFET | |
12 | SVT035R5NT |
Silan Microelectronics |
N-CHANNEL MOSFET |