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SVT033R5NT - Silan Microelectronics

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SVT033R5NT N-CHANNEL MOSFET

The SVT033R5NT is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in the fields of uninterruptible power supplies and power .

Features

 180A, 30V, RDS(on)(typ.)=2.8m@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 1 23 TO-220-3L ORDERING INFORMATION Part No. SVT033R5NT Package TO-220-3L Marking 033R5NT Hazardous Substance Control Pb free Packing Type Tube ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, TC=25C) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed TC=25°C TC=100°C Power Dissipation (TC=25C) -Derate above 25C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Range Storage Temperature Range Symbol.

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