SVT03110PL3 is a P channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance. This device is widely used in UPS, Power Managemen.
-46A, -30V, RDS(on)(typ.) =7.0m@VGS=-10V Low gate charge Low Crss Fast switching Improved dv/dt capability 100% avalanche tested Pb-free lead plating RoHS compliant S1 S2 S3 G4 8D 7D 6D 5D 8 7 6 5 65 7 8 1 2 3 4 4 3 2 1 PDFN-8-3.3×3.3×0.75-0.65 KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max ID Qg.typ Ratings -30 -1.0~-3.0 11 -46 51 Unit V V m A nC ORDERING INFORMATION Part No. SVT03110PL3TR Package PDFN-8-3.3x3.3x0.75-0.65 Marking 0311 Hazardous Substance Control Halogen free Packing Type Tape & Reel HANGZHOU SILAN MICROELECTRONICS CO.,LT.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SVT03100ND |
Silan Microelectronics |
30V N-CHANNEL MOSFET | |
2 | SVT03100NL3 |
Silan Microelectronics |
N-CHANNEL MOSFET | |
3 | SVT03120NL2 |
Silan Microelectronics |
N-CHANNEL MOSFET | |
4 | SVT03380PSA |
Silan Microelectronics |
P-CHANNEL MOSFET | |
5 | SVT033R5NAT |
Silan Microelectronics |
N-CHANNEL MOSFET | |
6 | SVT033R5NT |
Silan Microelectronics |
N-CHANNEL MOSFET | |
7 | SVT034R0NL5 |
Silan Microelectronics |
N-CHANNEL MOSFET | |
8 | SVT035R5ND |
Silan Microelectronics |
N-CHANNEL MOSFET | |
9 | SVT035R5NL5 |
Silan Microelectronics |
N-CHANNEL MOSFET | |
10 | SVT035R5NMJ |
Silan Microelectronics |
N-CHANNEL MOSFET | |
11 | SVT035R5NSA |
Silan Microelectronics |
N-CHANNEL MOSFET | |
12 | SVT035R5NT |
Silan Microelectronics |
N-CHANNEL MOSFET |