SVT033R5NAT - Silan Microelectronics

SVT033R5NAT N-CHANNEL MOSFET

The SVT033R5NAT is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in the fields of uninterruptible power supplies and power.

Features

 180A,30V,RDS(on)(typ.)=2.8m@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 2 1 3 1.Gate 2.Drain 3.Source 1 23 TO-220HW-3L ORDERING INFORMATION Part No. SVT033R5NAT Package TO-220HW-3L Marking 033R5NAT Hazardous Substance Control Pb free Packing Type Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn Rev.:1.1 Page 1 of 8 Silan Microelectronics SVT033R5NAT_Datasheet ABSOLUTE MAXIMUM RATINGS (UNLESS OTHERWISE NOTED,TA=25C) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed TC=25°C T.