SVTP035R5NL3 - Silan Microelectronics

SVTP035R5NL3 N-CHANNEL MOSFET

SVTP035R5NL3 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode. This device is w.

Features

 54A, 30V, RDS(on)(typ.)=4.0m@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability S1 S2 S3 G4 8D 7D 6D 5D 8 7 6 5 65 87 1 2 3 4 4 3 2 1 PDFN-8-3.3×3.3×0.75-0.65 ORDERING INFORMATION Part No. Package SVTP035R5NL3TR PDFN-8-3.3x3.3x0.75-0.65 Marking P035 Hazardous Substance Control Halogen free Packing Type Tape & reel ABSOLUTE MAXIMUM RATINGS (UNLESS OTHERWISE NOTED, TA=25C) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current TC=25°C TC=100°C Drain Current Pulsed Power Dissipation (TC=25C) -Derate above 25C Single Pulse.