SVT043R0NL5 - Silan Microelectronics

SVT043R0NL5 N-CHANNEL MOSFET

2 S1 8D SVT043R0NT/L5 is an N-channel enhancement mode power MOS S2 7D field effect transistor which is produced using Silan's LVMOS 1 S3 6D technology. The improved process and cell structure have been G4 5D especially tailored to minimize on-state resistance, provide superior 3 switching performance. 1.Gate 2.Drain 3.Source These devices a.

Features

 180A, 40V, RDS(on)(typ.)=2.6m@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability TO-220-3L 5 678 8765 43 21 1 234 PDFN-8-5X6X0.95-1.27 ORDERING INFORMATION Part No. SVT043R0NT SVT043R0NL5TR Package TO-220-3L PDFN-8-5X6X0.95-1.27 Marking 043R0NT 043R0NL5 Hazardous Substance Control Pb free Halogen free Packing Type Tube Tape&Reel HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn Rev.:1.2 Page 1 of 8 Silan Microelectronics SVT043R0NT/L5_Datasheet ABSOLUTE MAXIMUM RATINGS (UNLESS OTHERWISE NOTED, TC=25C) Characteristics Symbol D.