SVT042R5NL5 - Silan Microelectronics

SVT042R5NL5 N-CHANNEL MOSFET

2 SVT042R5NL5(T) is an N-channel enhancement mode power MOS S1 8D field effect transistor which is produced using advanced LVMOS 1 technology. The improved process and cell structure have been S2 7D S3 6D G4 5D especially tailored to minimize on-state resistance, provide superior 3 switching performance. 1.Gate 2.Drain 3.Source This device is.

Features

 240A, 40V, Low gate charge  Low Crss  Fast switching  Improved dv/dt capability TO-220-3L 5 678 8765 43 21 1 234 PDFN-8-5X6X0.95-1.27 ORDERING INFORMATION Part No. SVT042R5NL5TR SVT042R5NT Package PDFN-8-5X6X0.95-1.27 TO-220-3L Marking 042R5NL5 042R5NT Hazardous Substance Control Halogen free Pb free Packing Type Tape&Reel Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn Rev.:1.5 Page 1 of 8 Silan Microelectronics SVT042R5NL5_Datasheet ABSOLUTE MAXIMUM RATINGS (UNLESS OTHERWISE NOTED, TJ=25C) Characteristics Drain-Source Voltage Gate-Source Voltage .