SVT041R7NT - Silan Microelectronics

SVT041R7NT N-CHANNEL MOSFET

SVT041R7NT is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in power management for UPS and Inverter Systems. 2 1 3 1.Gat.

Features

 195A, 40V, RDS(on)(typ.)=1.4m@VGS=10V  Low gate charge  Low Crss  Fast switching  Extreme dv/dt rated  100% avalanche tested  Pb-free lead plating  RoHS compliant 1 2 3 TO-220-3L KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max ID Qg.typ Ratings 40 2.0~4.0 1.7 195 175 Unit V V m A nC ORDERING INFORMATION Part No. SVT041R7NT Package TO-220-3L Marking 041R7NT Hazardous Substance Control pb free Packing Type Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn Rev.:1.0 Page 1 of 8 Silan Microelectronics SVG041R7NT_Datasheet ABSOLUTE MA.