SUP70N06-14 - Vishay Siliconix

SUP70N06-14 N-Channel MOSFET

SUP/SUB70N06-14 Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (W) 0.014 ID (A) 70a TO-220AB D TO-263 DRAIN connected to TAB G G D S Top View SUP70N06-14 SUB70N06-14 D S G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Gate-Source Voltage Continuous Drai.

Features

ldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70291 S-57253—Rev. C, 24-Feb-98 www.vishay.com S FaxBack 408-970-5600 RthJC RthJA 62.5 1.05 Symbol Limit 40 Unit _C/W 2-1 SUP/SUB70N06-14 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, IDS = 1 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V Zero Gate Voltage Drain Z G V l D i Current C IDSS VDS = 60 V, VGS = 0 V, TJ = 125_C VDS = 60 V, VGS = 0 V, TJ = 17.