SUP/SUB70N03-09BP New Product Vishay Siliconix N-Channel 30-V (D-S), 175_C, MOSFET PWM Optimized PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) 0.009 @ VGS = 10 V 0.013 @ VGS = 4.5 V ID (A) 70a 60 TO-220AB D TO-263 G DRAIN connected to TAB G G D S Top View SUP70N03-09BP SUB70N03-09BP N-Channel MOSFET D S Top View S ABSOLUTE MAXIMUM RATINGS (TC = 25_C .
—Rev. B, 11-Mar-02 www.vishay.com Free Air (TO-220AB) RthJA RthJC Symbol Limit 40 62.5 1.6 Unit _C/W 1 SUP/SUB70N03-09BP Vishay Siliconix New Product MOSFET SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, IDS = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V, TJ = 125_C VDS = 24 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 30 A Drai.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SUP70N03-09P |
Vishay Siliconix |
N-Channel MOSFET | |
2 | SUP70N04-10 |
Vishay |
N-Channel MOSFET | |
3 | SUP70N06-14 |
Vishay Siliconix |
N-Channel MOSFET | |
4 | SUP70040E |
Vishay |
N-Channel MOSFET | |
5 | SUP70040E |
INCHANGE |
N-Channel MOSFET | |
6 | SUP70060E |
Vishay |
N-Channel MOSFET | |
7 | SUP70060E |
INCHANGE |
N-Channel MOSFET | |
8 | SUP70101EL |
Vishay |
P-Channel MOSFET | |
9 | SUP75N03-04 |
Vishay Siliconix |
N-Channel MOSFET | |
10 | SUP75N03-07 |
Vishay Siliconix |
N-Channel MOSFET | |
11 | SUP75N05-06 |
Vishay Siliconix |
N-Channel MOSFET | |
12 | SUP75N05-07 |
Vishay Siliconix |
N-Channel MOSFET |