SUP70N04-10 - Vishay

SUP70N04-10 N-Channel MOSFET

SUP/SUB70N04-10 Vishay Siliconix N-Channel 40-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (W) 0.010 @ VGS = 10 V 0.014 @ VGS = 4.5 V ID (A) 70 58 TO-220AB TO-263 DRAIN connected to TAB GDS Top View SUP70N04-10 G DS Top View SUB70N04-10 D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter S.

Features

ol RthJA RthJC Typical 35 45 1.2 Maximum 40 50 1.4 Unit _C/W www.vishay.com 2-1 SUP/SUB70N04-10 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta V(BR)DSS VGS(th) IGSS IDSS ID(on) Drain-Source On-State Resistancea Forward Transconductancea Dynamicb rDS(on) gfs VGS = 0 V, ID = 250 mA VDS = VGS, IDS = 250 mA VDS = 0 V, VGS = "20 V VDS = 40 V, VGS = 0 V VDS = 40 V, VGS = 0 V, TJ = 125_C VDS = 40 V, VG.