This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters Table 1. Device summary Order codes STI1.
Type STB19NM65N STF19NM65N STI19NM65N STP19NM65N STW19NM65N VDSS (@Tjmax) 710 V 710 V 710 V 710 V 710 V RDS(on) max < 0.27 Ω < 0.27 Ω < 0.27 Ω < 0.27 Ω < 0.27 Ω ID
3
15.5 A 15.5 A(1) 15.5 A 15.5 A 15.5 A
1
2
3 12
TO-220
3 1 2
I²PAK
TO-220FP
3 1
2 3
1. Limited only by maximum temperature allowed
■
■
■
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
D²PAK
1
TO-247
Figure 1.
Internal schematic diagram
Application
■
Switching applications
Description
This series of devices implements the second generation of MDmesh™ Technology. This revolution.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STW19NM60N |
STMicroelectronics |
N-channel Power MOSFET | |
2 | STW19NM60N |
INCHANGE |
N-Channel MOSFET | |
3 | STW19NM50N |
STMicroelectronics |
N-channel Power MOSFETs | |
4 | STW19NM50N |
INCHANGE |
N-Channel MOSFET | |
5 | STW10N105K5 |
STMicroelectronics |
N-channel Power MOSFET | |
6 | STW10N95K5 |
STMicroelectronics |
N-channel Power MOSFET | |
7 | STW10NA50 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | |
8 | STW10NB60 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
9 | STW10NC60 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
10 | STW10NC70Z |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
11 | STW10NK60Z |
ST Microelectronics |
N-channel Power MOSFET | |
12 | STW10NK80Z |
ST Microelectronics |
N-CHANNEL Power MOSFET |