isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current ID= 13A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drai.
·Drain Current ID= 13A@ TC=25℃
·Drain Source Voltage-
: VDSS= 600V(Min)
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
±25
V
ID
Drain Current-continuous@ TC=25℃
13
A
IDM
Pulse Drain Current
52
A
Ptot
Total Dissipation@TC=25℃
110
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
·THERMAL CHA.
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary.
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