Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charg.
Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature
o o o
Value 600 600 ± 30 10 6.2 40 160 1.28 4.5 -65 to 150 150
( 1) ISD ≤ 10A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Un it V V V A A A W W /o C V/ns
o o
C C 1/8
(
•) Pulse width limited by safe operating area
October 1998
STW10NB60
THERMAL DATA
R thj -case.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STW10N105K5 |
STMicroelectronics |
N-channel Power MOSFET | |
2 | STW10N95K5 |
STMicroelectronics |
N-channel Power MOSFET | |
3 | STW10NA50 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | |
4 | STW10NC60 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
5 | STW10NC70Z |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
6 | STW10NK60Z |
ST Microelectronics |
N-channel Power MOSFET | |
7 | STW10NK80Z |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
8 | STW11NB80 |
ST Microelectronics |
N-CHANNEL PowerMESH MOSFET | |
9 | STW11NK100Z |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
10 | STW11NK90Z |
ST Microelectronics |
N-channel Zener-protected SuperMESH Power MOSFET | |
11 | STW11NM80 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
12 | STW120NF10 |
ST Microelectronics |
N-channel Power MOSFET |