STW10NA50 - ST Microelectronics

STW10NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-A.

Features

TW/STH10NA50 VD S V DG R V GS ID ID ID M(
•) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain-gate Voltage (RG S = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Unit STH10NA50FI V V V 5.6 3.5 38 60 0.48 4000 A A A W W/o C V o o 500 500 ± 30 9.6 6.1 38 150 1.2  -65 to 150 150 C C (
•) Pulse width limited by safe operating area November 1996 1/11 STH1.