The third generation of MESH OVERLAY ™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications. APPLICATIONS s SINGLE-END.
OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 3/8 STW10NC70Z Safe Operating Area Thermal Impedance Output Characteristics Transfer Characteristics Transcon.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STW10NC60 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
2 | STW10N105K5 |
STMicroelectronics |
N-channel Power MOSFET | |
3 | STW10N95K5 |
STMicroelectronics |
N-channel Power MOSFET | |
4 | STW10NA50 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | |
5 | STW10NB60 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
6 | STW10NK60Z |
ST Microelectronics |
N-channel Power MOSFET | |
7 | STW10NK80Z |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
8 | STW11NB80 |
ST Microelectronics |
N-CHANNEL PowerMESH MOSFET | |
9 | STW11NK100Z |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
10 | STW11NK90Z |
ST Microelectronics |
N-channel Zener-protected SuperMESH Power MOSFET | |
11 | STW11NM80 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
12 | STW120NF10 |
ST Microelectronics |
N-channel Power MOSFET |