The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERT.
source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature 10 6.3 40 160 1.28
Value STW10NC60 600 600 ±30 10 (
*) 6.3 (
*) 40 (
*) 60 0.48 3.5 2500
– 55 to 150
(1)ISD ≤ 10A, di/dt ≤100A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX (
*) Limited only by Maximum Temperature Allowed
Unit V V V A A A W W/°C V/ns V °C
STH10NC60FI
(
•)Pulse width limited by safe operating area
February .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STW10NC70Z |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
2 | STW10N105K5 |
STMicroelectronics |
N-channel Power MOSFET | |
3 | STW10N95K5 |
STMicroelectronics |
N-channel Power MOSFET | |
4 | STW10NA50 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | |
5 | STW10NB60 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
6 | STW10NK60Z |
ST Microelectronics |
N-channel Power MOSFET | |
7 | STW10NK80Z |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
8 | STW11NB80 |
ST Microelectronics |
N-CHANNEL PowerMESH MOSFET | |
9 | STW11NK100Z |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
10 | STW11NK90Z |
ST Microelectronics |
N-channel Zener-protected SuperMESH Power MOSFET | |
11 | STW11NM80 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
12 | STW120NF10 |
ST Microelectronics |
N-channel Power MOSFET |