STU8NM60ND - STMicroelectronics

STU8NM60ND Power MOSFET

The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.Strongly recommended for bridge topologies, in ZVS phase-shift conver.

Features

Type STD8NM60ND STF8NM60ND STP8NM60ND STU8NM60ND VDSS (@Tjmax) 650 V 650 V 650 V 650 V RDS(on) max < 0.70 Ω < 0.70 Ω < 0.70 Ω < 0.70 Ω ID 3 3 2 1 1 2 7A 7A 7 A(1) 7A IPAK TO-220 1. Limited only by maximum temperature allowed
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■ 3 1 3 1 2 The worldwide best RDS(on)
* area amongst the fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt and avalanche capabilities Figure 1. DPAK TO-220FP Internal schematic diagram Application
■ Switching applications Description The FDmesh™ II series belongs to th.