STU8NA80 - STMicroelectronics

STU8NA80 N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES (UPS) ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR V GS ID ID I DM ( • ) P tot T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-.

Features

DGR V GS ID ID I DM (
• ) P tot T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature o Value 800 800 ± 30 8.3 5.3 33.2 160 1.28 -65 to 150 150 Unit V V V A A A W W/ o C o o C C (
•) Pulse width limited by safe operating area March 1996 1/5 STU8NA80 THERMAL DATA R thj-case Rthj-amb R thc-sink Tl Thermal Resistance Junction.