These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on.
Type
STB8N65M5 STD8N65M5 STF8N65M5 STI8N65M5 STP8N65M5 STU8N65M5
VDSS @ RDS(on) TJmax max.
ID
710 V < 0.6 Ω 7 A
PTOT
70 W 70 W 25 W 70 W 70 W 70 W
■ Worldwide best RDS(on)
* area
■ Higher VDSS rating
■ High dv/dt capability
■ Excellent switching performance
■ Easy to drive
■ 100% avalanche tested
Applications
■ Switching applications
3 2 1
TO-220FP
TAB
3 1
DPAK
TAB
3 2 1
TO-220
TAB
123
I²PAK
TAB
3 1
D²PAK
TAB
IPAK
3
2 1
Figure 1. Internal schematic diagram
$ 4!"
Description
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical proc.
isc N-Channel MOSFET Transistor STU8N65M5 FEATURES ·Drain Current –ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(.
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---|---|---|---|---|
1 | STU8N80K5 |
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2 | STU8NA80 |
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4 | STU8NC90Z |
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5 | STU8NC90ZI |
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6 | STU8NM50N |
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7 | STU8NM50N |
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8 | STU8NM60ND |
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9 | STU8NM60ND |
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