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STU8NM60ND |
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| Part Number | STU8NM60ND |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor STU8NM60ND FEATURES ·Drain Current –ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max) ·100% avalanche t... |
| Features |
·Drain Current –ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 7 A IDM Drain Current-Single Pluse 28 A PD Total Dissipation @TC=25℃ 70 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Tem... |
| Document |
 STU8NM60ND Data Sheet
PDF 283.97KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STU8NM60ND |
STMicroelectronics |
Power MOSFET |
|
| 2 | STU8NM50N |
STMicroelectronics |
N-channel Power MOSFET |
|
| 3 | STU8NM50N |
INCHANGE |
N-Channel MOSFET |
|
| 4 | STU8N65M5 |
ST Microelectronics |
Power MOSFETs |
|
| 5 | STU8N65M5 |
INCHANGE |
N-Channel MOSFET |
|