Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charg.
meter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature
o o
Value 900 900 ± 30 8.9 5.6 35 160 1.28 4.5 -65 to 150 150
( 1) ISD ≤8.9 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Unit V V V A A A W W/ o C V/ns
o o
C C 1/5
(
•) Pulse width limited by safe operating area
December 1998
This is preliminary infor.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STU8N65M5 |
ST Microelectronics |
Power MOSFETs | |
2 | STU8N65M5 |
INCHANGE |
N-Channel MOSFET | |
3 | STU8N80K5 |
STMicroelectronics |
N-channel Power MOSFET | |
4 | STU8NA80 |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | |
5 | STU8NC90Z |
STMicroelectronics |
N-channel Power MOSFET | |
6 | STU8NC90ZI |
STMicroelectronics |
N-channel Power MOSFET | |
7 | STU8NM50N |
STMicroelectronics |
N-channel Power MOSFET | |
8 | STU8NM50N |
INCHANGE |
N-Channel MOSFET | |
9 | STU8NM60ND |
STMicroelectronics |
Power MOSFET | |
10 | STU8NM60ND |
INCHANGE |
N-Channel MOSFET | |
11 | STU80N4F6 |
STMicroelectronics |
N-channel Power MOSFET | |
12 | STU85N3LH5 |
STMicroelectronics |
N-channel Power MOSFET |