STU85N3LH5 - STMicroelectronics

STU85N3LH5 N-channel Power MOSFET

This product utilizes the 5th generation of design rules of ST’s proprietary STripFETTM technology. The lowest available RDS(on)*Qg, in the standard packages, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved. 3 1 DPAK IPAK 3 2 1 3 2 1 TO-220 Figure 1. Internal schematic diagram T.

Features

Type STD85N3LH5 STP85N3LH5 STU85N3LH5 VDSS RDS(on) max. ID 30 V < 0.005 Ω 80 A
■ RDS(on)
* Qg industry benchmark
■ Extremely low on-resistance RDS(on)
■ High avalanche ruggedness
■ Low gate drive power losses Application Switching applications Description This product utilizes the 5th generation of design rules of ST’s proprietary STripFETTM technology. The lowest available RDS(on)
*Qg, in the standard packages, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved. 3 1 DPAK IPAK 3 2 1 3 2 1 TO-220 Figure 1. Inte.