STU334S - SamHop Microelectronics

STU334S N-Channel Logic Level Enhancement Mode Field Effect Transistor

STU/D334SGre Pro Sa mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor Ver 1.0 PRODUCT SUMMARY VDSS ID RDS(ON) (m ) Max 4.7 @ VGS=10V 30V 60A 6.8 @ VGS=4.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S STU SERIES TO - 252AA( D- PAK ) G DS STD SERIE.

Features

Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S STU SERIES TO - 252AA( D- PAK ) G DS STD SERIES TO - 251( I - PAK ) ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous IDM -Pulsed a TC=25°C TC=70°C EAS Single Pulse Avalanche Energy c PD Maximum Power Dissipation TC=25°C TC=70°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junc.