STPSC2H12-Y - STMicroelectronics

STPSC2H12-Y 2A power Schottky silicon carbide diode

The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior.

Features

• AEC-Q101 qualified
• PPAP capable
• No or negligible reverse recovery
• High forward surge capability
• Operating Tj from -40 °C to 175 °C
• Creepage distance of 3 mm as per IEC 60664-1
• ECOPACK2 compliant component Applications
• Bootstrap function of SiC MOS-FETS
• Snubber diode
• Switching diode Description The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off an.