STPSC20H12 - STMicroelectronics

STPSC20H12 power Schottky silicon carbide diode

The SiC diode, available in TO-220AC, D²PAK and TO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns a.

Features

• None or negligible reverse recovery
• Switching behavior independent of temperature
• Robust high voltage periphery
• Operating Tj from -40 °C to 175 °C
• ECOPACK2 compliant component Applications
• Solar inverter
• Boost PFC
• Air conditioning equipment
• UPS power supply
• Telecom / Server power equipment
• HEV/EV OBC (On board battery chargers)
• EV Charging station Description The SiC diode, available in TO-220AC, D²PAK and TO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of.