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STPSC2H12-Y |
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| Part Number | STPSC2H12-Y |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a... |
| Features |
• AEC-Q101 qualified • PPAP capable • No or negligible reverse recovery • High forward surge capability • Operating Tj from -40 °C to 175 °C • Creepage distance of 3 mm as per IEC 60664-1 • ECOPACK2 compliant component Applications • Bootstrap function of SiC MOS-FETS • Snubber diode • Switching diode Description The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off an... |
| Document |
 STPSC2H12-Y Data Sheet
PDF 294.43KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STPSC2H12 |
STMicroelectronics |
1200V power Schottky silicon carbide diode |
|
| 2 | STPSC2H065 |
STMicroelectronics |
power Schottky diode |
|
| 3 | STPSC20065-Y |
STMicroelectronics |
power Schottky silicon carbide diode |
|
| 4 | STPSC2006CW |
STMicroelectronics |
600V power Schottky silicon carbide diode |
|
| 5 | STPSC20G12-Y |
STMicroelectronics |
20A power Schottky high surge silicon carbide diode |
|