The STPSC20H065CWLY is an ultra-high-performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off beh.
• AEC-Q101 qualified
• PPAP capable
• No or negligible reverse recovery
• Switching behavior independent of temperature
• Dedicated to PFC applications
• High forward surge capability
• ECOPACK2 compliant component
Applications
• On board charger (OBC)
• Charging stations
• PFC applications
• UPS
• Inverters
• Telecom power supplies
Description
The STPSC20H065CWLY is an ultra-high-performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STPSC20H065C |
STMicroelectronics |
power Schottky silicon carbide diode | |
2 | STPSC20H065C-Y |
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Automotive 650V power Schottky silicon carbide diode | |
3 | STPSC20H12 |
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power Schottky silicon carbide diode | |
4 | STPSC20H12-Y |
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5 | STPSC20H12CWY |
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6 | STPSC20065-Y |
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7 | STPSC2006CW |
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600V power Schottky silicon carbide diode | |
8 | STPSC20G12-Y |
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9 | STPSC2H065 |
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10 | STPSC2H12 |
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11 | STPSC2H12-Y |
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12 | STPSC1006 |
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Schottky silicon carbide diode |