STPSC2H065 - STMicroelectronics

STPSC2H065 power Schottky diode

The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior .

Features

• No reverse recovery charge in application current range
• Switching behavior independent of temperature
• High forward surge capability
• ECOPACK2 compliant component
• Power efficient product Applications
• Switch mode power supply
• PFC
• "DC/DC" converters
• LLC topologies
• Boost diode Description The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing p.