STPSC20G12-Y - STMicroelectronics

STPSC20G12-Y 20A power Schottky high surge silicon carbide diode

The SiC diode, available in DO-247 with long leads, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Thanks to the Schottky construction, no recovery is shown during turn-off and ringing patterns a.

Features

• AEC-Q101 qualified and PPAP capable
• None or negligible reverse recovery
• Switching behavior independent of temperature
• Robust high voltage periphery
• Operating Tj from -55 °C to 175 °C
• Avalanche energy rated
• ECOPACK2 compliant component Applications
• Boost PFC
• HEV/EV OBC (On board battery chargers)
• EV Charging station Description The SiC diode, available in DO-247 with long leads, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 12.